Distributed feedback surface-emitting laser with air/semiconductor gratings embedded by mass-transport assisted wafer fusion technique
- 1 April 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (4) , 419-421
- https://doi.org/10.1109/68.559374
Abstract
We report on a distributed feedback InGaAsP MQW laser with air/semiconductor gratings embedded by wafer-fusion technique with the assistance of mass-transport phenomenon for the first time. The air/semiconductor gratings with 0.4-/spl mu/m period and 0.2-/spl mu/m depth are successfully fabricated inside the device, and a single longitudinal mode oscillation at about 1.28 /spl mu/m is demonstrated under pulsed condition at room temperature. The threshold current density is estimated to be about 1.4 kA/cm/sup 2/. It is also shown that the device has a surface-emitting function since it has a low loss multiquantum-well waveguide with grating output coupler.Keywords
This publication has 8 references indexed in Scilit:
- New Realization Method for Three-Dimensional Photonic Crystal in Optical Wavelength RegionJapanese Journal of Applied Physics, 1996
- Double-fused 1.52-μm vertical-cavity lasersApplied Physics Letters, 1995
- Low-threshold pulsed operation of long-wavelengthlasers on Sifabricated by direct bondingElectronics Letters, 1995
- Electrical characteristics of directly-bonded GaAs and InPApplied Physics Letters, 1993
- Surface-energy-induced mass-transport phenomenon in annealing of etched compound semiconductor structures: Theoretical modeling and experimental confirmationJournal of Applied Physics, 1990
- Monolithic integration of an AlGaAs/GaAs multiple quantum well distributed feedback laser and a grating coupler for surface emissionApplied Physics Letters, 1987
- Silicon-to-silicon direct bonding methodJournal of Applied Physics, 1986
- Wafer bonding for silicon-on-insulator technologiesApplied Physics Letters, 1986