A HI-CMOSII 8K × 8b static RAM
- 1 January 1982
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. XXV, 256-257
- https://doi.org/10.1109/isscc.1982.1156345
Abstract
A fully-static 8K×8b RAM using HICMOSII technology with a typical address access time of 65ns and power dissipation of 200mW will be discussed. To improve manufacturing yield a laser redundancy technique utilizing a N+ -i-N+ polysilicon structure was employed.Keywords
This publication has 4 references indexed in Scilit:
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- 2K×8b HCMOS static RAMsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- A fault-tolerant 64K dynamic RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979