Ion-beam-induced epitaxial crystallization kinetics in ion implanted GaAs
- 1 December 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (11) , 6567-6569
- https://doi.org/10.1063/1.342029
Abstract
Thin amorphous GaAs layers on (100)-oriented substrates, generated by Si+ ion bombardment at 77 K, have been observed to recrystallize epitaxially during 1.5-MeV Ne+ bombardment in the temperature range 75–135 °C. Crystallization proceeds linearly with increasing ion fluence, except in the near-surface region, and the process is characterized by an activation energy of 0.16 eV, which is an order of magnitude smaller than that obtained for conventional thermal annealing at much higher temperatures.This publication has 9 references indexed in Scilit:
- Ion Beam Induced Regrowth in GaAsMRS Proceedings, 1988
- Ion-beam-induced crystallization and amorphization of siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Ion Beam Induced Amorphization and Crystallization Processes in Silicon and GaAsMRS Proceedings, 1986
- Direct measurement of solid-phase epitaxial growth kinetics in GaAs by time-resolved reflectivityJournal of Applied Physics, 1985
- Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous SiliconPhysical Review Letters, 1985
- Kinetics and Mechanisms of Solid Phase Epitaxy and Competitive Processes in SiliconMRS Proceedings, 1984
- Dechanneling analysis of disorder in (100) gallium arsenideNuclear Instruments and Methods in Physics Research, 1983
- Electrical, Rutherford backscattering and transmission electron microscopy studies of furnace annealed zinc implanted GaAsSolid-State Electronics, 1980
- Low-temperature epitaxial regrowth of ion-implanted amorphous GaAsApplied Physics Letters, 1980