Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
- 1 July 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (7B) , L799
- https://doi.org/10.1143/jjap.38.l799
Abstract
A striking effect of piezoelectric electron confinement on transport properites has been observed for the first time in nitride double-heterostructures. The two-dimensional electron gas mobility has shown to be drastically enhanced in the AlGaN/GaN/AlGaN double-heterostructure, compared with that in the conventional AlGaN/GaN single-heterostructure. The observed mobility enhancement results from the piezoelectrically enhanced electron confinement in the double-heterostructure. The electron transport properties in the AlGaN/InGaN/AlGaN double-heterostructure have also been examined for the first time. The increased capacity for the two-dimensional electron gas density has been observed in addition to the enhanced electron mobility. The AlGaN/(In)GaN/AlGaN double-heterostructures are promising for field effect transistor applications because of their superior electron transport properties.Keywords
This publication has 15 references indexed in Scilit:
- Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistorsApplied Physics Letters, 1998
- The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructuresApplied Physics Letters, 1998
- Piezoresistive effect in GaN–AlN–GaN structuresApplied Physics Letters, 1997
- Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistorsApplied Physics Letters, 1997
- Piezoelectric charge densities in AlGaN/GaN HFETsElectronics Letters, 1997
- Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlatticesJournal of Applied Physics, 1997
- AlGaN/GaN HEMTs grown on SiC substratesElectronics Letters, 1997
- High temperature characteristics of AlGaN/GaN modulation doped field-effect transistorsApplied Physics Letters, 1996
- Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistorsApplied Physics Letters, 1996
- The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structureJournal of Applied Physics, 1993