A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (10) , 1723-1729
- https://doi.org/10.1109/16.277326
Abstract
No abstract availableKeywords
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