A CAD-oriented non-quasi-static approach for the transient analysis of MOS ICs

This publication has 16 references indexed in Scilit:

• A CAD-oriented non-quasistatic MOSFET model for transient analysis
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1986
• A small signal dc-to-high-frequency nonquasistatic model for the four-terminal MOSFET valid in all regions of operation
  IEEE Transactions on Electron Devices, 1985
• Techniques for small-signal analysis of semiconductor devices
  IEEE Transactions on Electron Devices, 1985
• Switch-induced error voltage on a switched capacitor
  IEEE Journal of Solid-State Circuits, 1984
• Limitations of quasi-static capacitance models for the MOS transistor
  IEEE Electron Device Letters, 1983
• Transient analysis of MOS transistors
  IEEE Transactions on Electron Devices, 1980
• A charge-oriented model for MOS transistor capacitances
  IEEE Journal of Solid-State Circuits, 1978
• Large- and small-signal channel transit time delays in long-channel MOS transistors
  IEEE Transactions on Electron Devices, 1977
• Calculation of the turn-on behavior of most
  Solid-State Electronics, 1974
• Small-signal, high-frequency equivalent circuit for the metal—oxide—semiconductor field-effect transistor
  Proceedings of the Institution of Electrical Engineers, 1969