Photoelectron yield spectroscopy of electronic states at ultrathin SiO2 Si
- 30 September 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 48 (1-4) , 63-66
- https://doi.org/10.1016/s0167-9317(99)00339-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage MeasurementsJapanese Journal of Applied Physics, 1999
- Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfacesApplied Surface Science, 1997
- Measurements of interface state density by X-ray photoelectron spectroscopySurface Science, 1991
- Exponential Conduction-Band Tail in P-DopedPhysical Review Letters, 1988
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967
- Direct and Indirect Excitation Processes in Photoelectric Emission from SiliconPhysical Review B, 1962
- Theory of Photoelectric Emission from SemiconductorsPhysical Review B, 1962