High transconductance AlGaN/GaN optoelectronic heterostructurefield effect transistor
- 23 November 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (24) , 2130-2131
- https://doi.org/10.1049/el:19951408
Abstract
The authors report on 1 µm gate Al0.15Ga0.85N/GaN heterostructure field effect transistors, which demonstrate a high transconductance (up to 64 mS/mm) under illumination. The increase in the transconductance and in device current under light is explained by the creation of trapped positive charge and conduction electrons in the channel, which enhances the surface density of the two-dimensional electron gas in the device channel up to 2 × 1012 cm-3 and decreases the source series resistance.Keywords
This publication has 4 references indexed in Scilit:
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °CApplied Physics Letters, 1995
- Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistorApplied Physics Letters, 1994
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- HEMT ModellingPublished by Springer Nature ,1993