Detection of H2S with Pd-gate MOS field-effect transistors
- 1 August 1976
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (8) , 3592-3593
- https://doi.org/10.1063/1.323162
Abstract
H2S gas sensitivity of Pd-gate MOS field-effect transistors has been studied in air for different temperatures. The possible chemical reactions of H2S and O2 on palladium are discussed.This publication has 3 references indexed in Scilit:
- A hydrogen-sensitive Pd-gate MOS transistorJournal of Applied Physics, 1975
- Hydrogen leak detector using a Pd-gate MOS transistorReview of Scientific Instruments, 1975
- A hydrogen−sensitive MOS field−effect transistorApplied Physics Letters, 1975