High-field electron transport in GaAs/AlxGa1−xAs p–i–n–i–p-structures investigated by ultrafast absorption changes
- 16 January 2002
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 13 (2-4) , 802-805
- https://doi.org/10.1016/s1386-9477(02)00195-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Transient high-field transport and electro-optical properties of AlxGa1−xAs-grading-structuresPhysica E: Low-dimensional Systems and Nanostructures, 2002
- Femtosecond high-field transport in compound semiconductorsPhysical Review B, 2000
- Dynamics of electric field screening in a bulk GaAs modulatorPhysical Review B, 1993
- The physics and applications of n-i-p-i doping superlatticesCritical Reviews in Solid State and Materials Sciences, 1986