Fluorine diffusion on a polysilicon grain boundary network in relation to boron penetration from P/sup +/ gates

1 January 1992

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 13 (1) , 14-16
https://doi.org/10.1109/55.144936

Abstract

The combined effect of boron penetration and fluorine transport from P/sup +/ polycrystalline gates on flat-band voltage is studied. The SIMS concentration depth profiles elucidate the effect of annealing temperature on the fluorine transport, which in turn affects the boron penetration induced change in flat-band voltage. The fluorine diffusion in the poly gate is dominated by grain boundary diffusion. The identification of this mechanism is supported by SIMS profiles and a simulation based on a new methodology of network diffusion.

Keywords

This publication has 4 references indexed in Scilit:

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