Stress-voiding in tungsten-plug interconnect systems induced by high-temperature processing
- 1 October 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (10) , 430-432
- https://doi.org/10.1109/55.464807
Abstract
We describe the sensitivity of sub-micron via integrity to high-temperature processing following via etch. It has been observed that thermal expansion of Al into the via hole, before tungsten deposition, may result in the fabrication of a deformed tungsten plug. Our results indicate that relaxation of the Al can give rise to stress-void formation under the tungsten plug. This may manifest itself either during electromigration stress or high-temperature storage. This mechanism represents a new reliability hazard for a tungsten-plug interconnect system.Keywords
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