A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2
- 1 June 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (11) , 3890-3893
- https://doi.org/10.1063/1.336731
Abstract
A model was constructed for electromigration failure where both Fickian diffusion and mass transport due to the electromigration driving force are considered concurrently. The solution to the resulting diffusion equation yields a current exponent of 2 and an activation energy consistent with grain-boundary self-diffusion. A modification of the standard median time to failure equation first proposed by Black is suggested.This publication has 21 references indexed in Scilit:
- Comments on ‘Thin film metallization studies and device lifetime prediction using Al-Si and Al-Cu-Si conductor test bars’Microelectronics Reliability, 1982
- Electromigration measuring techniques for grain boundary diffusion activation energy in aluminumSolid-State Electronics, 1981
- Electromigration mechanism in aluminium conductorsSolid-State Electronics, 1980
- Electromigration testing of Ti: W/Al and Ti: W/Al-Cu film conductorsThin Solid Films, 1978
- A modified reliability expression for the electromigration time-to-failureMicroelectronics Reliability, 1975
- Untersuchung der Korngrenzendiffusion von Zn‐65 in α‐Aluminium‐Zink‐LegierungenCrystal Research and Technology, 1974
- Electromigration failure in NiCr thin-film stripesApplied Physics Letters, 1973
- Electromigration and metalization lifetimesJournal of Applied Physics, 1973
- Time-dependent void nucleation during electromigrationMaterials Science and Engineering, 1971
- Surface topology changes during electromigration in metallic thin film stripesThin Solid Films, 1969