Comments on ‘Thin film metallization studies and device lifetime prediction using Al-Si and Al-Cu-Si conductor test bars’
- 1 January 1982
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 22 (4) , 837-840
- https://doi.org/10.1016/s0026-2714(82)80197-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Thin film metallization studies and device lifetime prediction using AlSi and AlCuSi conductor test barsMicroelectronics Reliability, 1981
- Electromigration in fine-line sputter-gun AlJournal of Applied Physics, 1980
- Procurement specification requirements for protection against electromigration failures in aluminium metallizationsMicroelectronics Reliability, 1979