NEAR-BAND-EDGE LUMINESCENCE IN GaAs:Zn
- 15 July 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (2) , 51-53
- https://doi.org/10.1063/1.1652503
Abstract
The lasing transition in bulk Zn‐doped GaAs has been resolved into three components (A′, B′, C′) with energies at 1.504, 1.489, and 1.484 eV, respectively. The higher energy levels are depopulated at low temperatures. The temperature dependence of the intensity of the transitions indicates a single luminescent center with a ground state and three excited states. A group‐theoretical analysis based on the Td symmetry of the Zn acceptor with s1/2 conduction band electrons and p3/2 valence band holes leads to the conclusion that the luminescent center must have lower symmetry than Td. The various possible types of centers are mentioned but there are no a priori reasons for choosing one over the other at the present time.Keywords
This publication has 2 references indexed in Scilit:
- Theory of the Effect of Strain on GaAs Electroluminescent DiodesJournal of Applied Physics, 1965
- Evidence for the Role of Donor states in GaAs ElectroluminescencePhysical Review Letters, 1963