Numerical analysis of magnetic-field-sensitive bipolar devices
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 10 (4) , 501-511
- https://doi.org/10.1109/43.75633
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- The Hall effect in integrated magnetotransistorsIEEE Transactions on Electron Devices, 1989
- Two-dimensional Numerical Analysis Of Silicon Bipolar MagnetotransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Analysis and Simulation of Semiconductor DevicesPublished by Springer Nature ,1984
- Device modelingProceedings of the IEEE, 1983
- Parameter Selection for Newton-Like Methods Applicable to Nonlinear Partial Differential EquationsSIAM Journal on Numerical Analysis, 1980
- On the Angle Condition in the Finite Element MethodSIAM Journal on Numerical Analysis, 1976
- Iterative scheme for computer simulation of semiconductor devicesSolid-State Electronics, 1972
- Large-signal analysis of a silicon Read diode oscillatorIEEE Transactions on Electron Devices, 1969
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964