Two-dimensional Numerical Analysis Of Silicon Bipolar Magnetotransistors

1 January 1987

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 3, 87-92
https://doi.org/10.1109/nascod.1987.721127

Abstract

The numerical analysis of carrier transport in magnetic-field-sensitive integrated bipolar transistors is presented. The resulting distributions of potential and current density were obtained for a lateral CMOS NPN dual-collector magne totransistor, in the presence of a magnetic field perpendicular to the device surface.

Keywords

This publication has 5 references indexed in Scilit:

Integrated semiconductor magnetic field sensors
Proceedings of the IEEE, 1986
Analysis and Simulation of Semiconductor Devices
Published by Springer Nature ,1984
Comment on "Magnetic transistor behavior explained by modulation of emitter injection, not carrier deflection"
IEEE Electron Device Letters, 1982
Magnetic transistor behavior explained by modulation of emitter injection, not carrier deflection
IEEE Electron Device Letters, 1982
Parameter Selection for Newton-Like Methods Applicable to Nonlinear Partial Differential Equations
SIAM Journal on Numerical Analysis, 1980