Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
- 28 August 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (9) , 1304-1306
- https://doi.org/10.1063/1.1290384
Abstract
The composition distribution of Ge(Si)/Si (001) islands grown at 700 °C by molecular beam epitaxy is investigated using high-spatial resolution x-ray energy dispersive spectrometry in a scanning transmission electron microscope. Island shapes are investigated using cross-section transmission electron microscopy. Results show nonuniformity of the composition distribution in the islands, which affects the evolution of the aspect ratios of height-to-base diameter of dislocated islands.Keywords
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