Intersubband transitions at 1.3 and 1.55 /spl mu/m in a novel coupled InGaAs-AlAsSb double-quantum-well structure
- 1 June 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 11 (6) , 632-634
- https://doi.org/10.1109/68.766767
Abstract
We report the first observation of intersubband absorption at 1.3 /spl mu/m in a coupled InGaAs-AlAsSb double-quantum-well structure lattice matched to InP substrate. The novel structure exhibits intersubband transitions concurrently at 1.3 and 1.55 /spl mu/m due to the strong coupling of the intersubband states of the adjacent wells. A transient analysis of optical response in the multilevel conduction subband states for the designed structure indicates ultrafast optical switching behavior with a subpicosecond response.Keywords
This publication has 6 references indexed in Scilit:
- Enhancement of Absorption Magnitude of Short-Wavelength Intersubband Transition in InGaAs/AlAs Quantum WellsJapanese Journal of Applied Physics, 1998
- Intersubband transitions in InGaAs/AlAs coupleddouble quantum wellstructures for multi-wavelength all-optical switchingElectronics Letters, 1998
- Investigation of short wavelength intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrateJournal of Applied Physics, 1997
- Near-infrared wavelength intersubband transitionsin high indium content InGaAs/AlAs quantum wells grown on GaAsElectronics Letters, 1997
- Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wellsApplied Physics Letters, 1994
- Quantum Well Intersubband Transition Physics and DevicesPublished by Springer Nature ,1994