High resolution electron microscopy of partial dislocations in the Laves phase structure
- 1 May 1986
- journal article
- Published by Wiley in Journal of Microscopy
- Vol. 142 (2) , 181-190
- https://doi.org/10.1111/j.1365-2818.1986.tb02755.x
Abstract
SUMMARY: A Mg‐base Laves phase was investigated by high resolution electron microscopy (HREM). Linear defects found at terminations of stacking faults were classified into three groups. The first is a partial dislocation at a termination of a stacking fault, the second is a superposed partial dislocation which is defined as a defect produced by a superposition of terminations of two or more stacking faults lying on neighbouring layers, and the third is a combined linear defect which consists of a characteristic combination of terminations of stacking faults. In the last case the total stacking fault vector becomes equal to the translation vector in the basal plane, so that the defect needs no relaxation of the lattice. The Burgers vectors of the partial dislocations were estimated with the aid of modified Burgers circuits.Keywords
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