Residual Interface Traps at Bird's Beaks of Field Oxide Layers
- 1 February 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (2R) , 240-241
- https://doi.org/10.1143/jjap.29.240
Abstract
The interface trap density (D it) of field oxide films is determined from the subthreshold characteristics of parasitic field effect transistors. A D it of 8×1014 m-2eV-1 persists in the bird's beak regions of local oxidation of silicon (LOCOS) structure after annealing at 723 K in a H2 ambient. This value is almost ten times larger than that observed for a SiO2/Si interface grown on a (100) Si plane.Keywords
This publication has 6 references indexed in Scilit:
- Chemistry of Si-SiO2 interface trap annealingJournal of Applied Physics, 1988
- Interface states under LOCOS bird's beak regionSolid-State Electronics, 1987
- Comparison of leakage currents in ion-implanted and diffused p-n junctionsJournal of Applied Physics, 1975
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966
- Radiation-induced increase in surface recombination velocity of thermally oxidized silicon structuresProceedings of the IEEE, 1966