Effect of Atomic Hydrogen on GaAs (001) Surface Oxide Studied by Temperature-Programmed Desorption

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Abstract
Atomic hydrogen (H·)-induced modification of Ga2O3-like oxide on GaAs (001) was studied by temperature-programmed desorption. H· treatment at 300°C caused a new Ga2O desorption starting at around 400°C, whereas a sample treated with molecular hydrogen gave simultaneous desorption of Ga2O and elemental As only above 500°C, the same as observed in the untreated sample. X-ray photoelectron spectroscopy showed a reduction in O1s intensity after the H· treatment. These results indicate that atomic hydrogen converts Ga2O3-like oxide into volatile Ga2O-like oxide and consequently lowers the oxide-removal temperature.