Formation of InGaAs/GaAs quantum dots by submonolayer molecular beam epitaxy
- 1 July 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 331-333, 414-418
- https://doi.org/10.1016/0039-6028(95)00299-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfacesApplied Physics Letters, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Direct observation of the growth-interruption effect for molecular-beam-epitaxy growth on GaAs(001) by scanning tunneling microscopyPhysical Review B, 1992
- Direct synthesis of corrugated superlattices on non-(100)-oriented surfacesPhysical Review Letters, 1991
- InAs quantum dots in a single-crystal GaAs matrixPhysical Review B, 1991
- Surface reaction of III–V compound semiconductors irradiated by As and Sb molecular beamsJournal of Crystal Growth, 1991
- Quantum well lasers--Gain, spectra, dynamicsIEEE Journal of Quantum Electronics, 1986