Direct observation of the growth-interruption effect for molecular-beam-epitaxy growth on GaAs(001) by scanning tunneling microscopy
- 15 July 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (3) , 1905-1908
- https://doi.org/10.1103/physrevb.46.1905
Abstract
Using a scanning tunneling microscope, we examine the evolution of the surface configuration of GaAs(001) upon annealing after molecular-beam-epitaxy growth interruption. Soon after growth interruption, the surface exhibits many two-dimensional islands elongated along the [11¯0] direction and a ragged step configuration. Continuous annealing after growth interruption causes changes in the surface topography. Annealing for 2 min makes the surface very smooth by decreasing the number of islands and smoothing the step shapes. Further annealing for about 20 min causes step bunching. The decrease in the number of islands and smoothing of step shapes are explained by shortening of the total step length.Keywords
This publication has 10 references indexed in Scilit:
- Optical investigation of interface roughness and defect incorporation in GaAs/AlGaAs quantum wells grown with and without growth interruptionApplied Physics Letters, 1991
- Dynamics and roughness spectrum of the GaAs(001) surface during the MBE processJournal of Crystal Growth, 1991
- Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxyApplied Physics Letters, 1991
- High-resolution transmission electron microscopy of GaAs/AlAs heterointerfaces grown on the misoriented substrate in the 〈110〉 projectionApplied Physics Letters, 1990
- Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyPhysical Review B, 1990
- Scanning tunneling microscope equipped with a field ion microscopeJournal of Vacuum Science & Technology A, 1989
- The (001) surface of molecular-beam epitaxially grown GaAs studied by scanning tunneling microscopyJournal of Vacuum Science & Technology B, 1988
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988
- Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985