High-resolution transmission electron microscopy of GaAs/AlAs heterointerfaces grown on the misoriented substrate in the 〈110〉 projection

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Abstract
Edge-on observations of the structures of vicinal interfaces of GaAs/AlAs heterostructures were carried out by high-resolution electron microscopy. In order to observe the interfacial steps running along the 〈110〉 direction edge-on, we demonstrate the imaging conditions for high-resolution observations in the 〈110〉 projection. Under these conditions, the structures of GaAs/AlAs interfaces, which were grown on the vicinal (001) substrate tilted toward [110], are examined in the [1̄10] projection. The interfacial structures are imaged edge-on, so that the monolayer height steps were observed. The results reveal fluctuations of terrace width and the roughness of step edges on an atomic scale.