Dynamics and roughness spectrum of the GaAs(001) surface during the MBE process
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 65-69
- https://doi.org/10.1016/0022-0248(91)90948-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Semiconductor interfaces: Abruptness, smoothness, and optical propertiesJournal of Crystal Growth, 1989
- The meandering of steps on GaAs(100)Journal of Crystal Growth, 1989
- Nucleation and growth during molecular beam epitaxy (MBE) of Si on Si(111)Surface Science, 1988
- Simulation of GaAs cluster formation on GaAs(001̄), AlAs(001̄), Si(001), and As1/Si(001) surfacesJournal of Vacuum Science & Technology B, 1988
- Comparative study of the growth processes of GaAs, AlGaAs, InGaAs, and InAlAs lattice matched and nonlattice matched semiconductors using high-energy electron diffractionJournal of Applied Physics, 1987
- Determination of terrace size and edge roughness in vicinal Si{100} surfaces by surface-sensitive diffractionJournal of Applied Physics, 1987
- Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanismsJournal of Vacuum Science & Technology B, 1985
- Spot profile analysis (LEED) of defects at silicon surfacesSurface Science, 1983
- Damped oscillations in reflection high energy electron diffraction during GaAs MBEJournal of Vacuum Science & Technology B, 1983
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983