Wavevector dependence of the volume plasmon of GaAs and InSb

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Abstract
The wavevector dependence of the volume plasmon energy and linewidth in epitaxially grown, polycrystalline, and amorphous GaAs and InSb has been studied, by measurements of the inelastic scattering of 56 keV electrons. For the epitaxially grown materials the author observed two characteristic features of the dispersion curves: (a) an anisotropy, i.e. dependence of the dispersion of the crystal direction, (b) a linear dependence on q2 with different slopes on either side of a transition region 0.4 AA-1-1. The latter behaviour is also found in polycrystalline InSb. The volume plasmon energies for the three crystal modifications are different at q-0.