High-performance second-harmonic operation W-band GaAs Gunn diodes
- 1 September 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (9) , 412-414
- https://doi.org/10.1109/55.34726
Abstract
High output power performance and DC-to-RF conversion efficiency of second-harmonic-operation W-band (75-110 GHz) GaAs Gunn diodes is reported. Output powers of 96 and 48 mW at 94 and 103 GHz, respectively, with a DC-to-Rf conversion efficiency of 2.7 and 2.3 percent, have been achieved using single-diode GaAs Gunn oscillators. The operation of these diodes requires 2 to 4 W of DC power consumption.Keywords
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- Comparison of the microwave velocity/field characteristics of n type InP and n type GaAsElectronics Letters, 1971