Co₂Si, CrSi₂, ZrSi₂ and TiSi₂ Formation Studied by a Radioactive ³¹Si Marker Technique

This publication has 14 references indexed in Scilit:

• Radioactive 31Si marker studies of metal silicide formation—computer simulation
  Thin Solid Films, 1982
• Studies of the Growth and Oxidation of Metal‐Silicides Using Radioactive 31Si as Tracer
  Journal of the Electrochemical Society, 1981
• An interface — marker technique applied to the study of metal silicide growth
  Nuclear Instruments and Methods, 1980
• Metallurgical and electrical properties of chromium silicon interfaces
  Solid-State Electronics, 1980
• Marker studies of silicide formation, silicon self-diffusion and silicon epitaxy using radioactive silicon and Rutherford backscattering
  Nuclear Instruments and Methods, 1978
• Radioactive silicon tracer studies of the formation of CrSi_{2on Pd2Si and PtSi}
  Philosophical Magazine A, 1978
• Radioactive silicon as a marker in thin-film silicide formation
  Applied Physics Letters, 1977
• Structure and growth kinetics of Ni2Si on silicon
  Thin Solid Films, 1975
• Implanted noble gas atoms as diffusion markers in silicide formation
  Thin Solid Films, 1975
• Identification of the dominant diffusing species in silicide formation
  Applied Physics Letters, 1974