Determination of the natural valence-band offset in the InxGa1−xAs system
- 16 November 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (20) , 1632-1633
- https://doi.org/10.1063/1.98578
Abstract
The natural valence‐band offset (NVBO) between semiconductors in a common anion alloy system can be determined through photoemission core level measurements. In this work, we tested this method in the InxGa1−xAs system. The NVBO between GaAs and InAs is measured to be 0.11±0.05 eV. This result is in approximate agreement with the experimental value of 0.17±0.07 eV determined by x‐ray photoemission spectroscopy measurements.Keywords
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