Control of selectivity during chemical vapor deposition of copper from copper (I) compounds via silicon dioxide surface modification
- 30 November 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (22) , 2662-2664
- https://doi.org/10.1063/1.108101
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Hot-wall chemical vapor deposition of copper from copper(I) compounds. 2. Selective, low-temperature deposition of copper from copper(I) .beta.-diketonate compounds, (.beta.-diketonate)CuLn, via thermally induced disproportionation reactionsChemistry of Materials, 1992
- A novel copper complex and CVD precursor: (.eta.2-butyne)copper(I) hexafluoroacetylacetonateChemistry of Materials, 1992
- Chemistry of copper(I) .beta.-diketonate complexes. 2. Synthesis, characterization, and physical properties of (.beta.-diketonato)copper(I) trimethylphosphine and bis(trimethylphosphine) complexesInorganic Chemistry, 1992
- Chemical vapor deposition of copper via disproportionation of hexafluoroacetylacetonato(1,5 -cyclooctadiene)copper(I), (hfac)Cu(1,5-COD)Journal of Materials Research, 1992
- The chemistry of β-diketonate copper(I) compounds—III. The synthesis of (β-diketonate) Cu(1,5-COD) compounds, the solid state structure and disproportionation of hexafluoroacetylacetonato (1,5-cyclooctadiene)copper(I), (hfac)Cu(1,5-COD)Polyhedron, 1991
- Preparation of volatile, monomeric copper(I) β-diketonate complexesPolyhedron, 1991
- Chemical vapor deposition of copper from (hexafluoroacetylacetonato)(alkyne)copper(I) complexes via disproportionationChemistry of Materials, 1991
- OMCVD of thin films from metal diketonates and triphenylbismuthJournal of Materials Research, 1990
- Trimethylamine complexes of alane as precursors for the low-pressure chemical vapor deposition of aluminumChemistry of Materials, 1989
- Reactive Ion Etching of Copper FilmsJournal of the Electrochemical Society, 1983