Growth of silicon ribbons by the RAD process
- 1 March 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 82 (1-2) , 110-116
- https://doi.org/10.1016/0022-0248(87)90173-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Finite element analysis of the interface shape in the growth of RAD silicon ribbonsJournal of Crystal Growth, 1987
- Passivation par l'hydrogène de défauts recombinants dans les photopiles réalisées sur rubans de silicium polycristallin RADRevue de Physique Appliquée, 1984
- Résistance du substrat de carbone au silicium fondu dans le procédé RADRevue de Physique Appliquée, 1984
- Semicontinuous edge-supported pulling of silicon sheetsJournal of Crystal Growth, 1982
- Supported growth of sheet silicon from the meltJournal of Crystal Growth, 1980
- Characterization Of Grain Boundaries Observed In Polycrystalline Silicon For Solar Cell ApplicationsJournal of Microscopy, 1980