Room-temperature excitons in strained InGaAs/GaAs quantum wells
- 6 February 1995
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 7 (6) , L79-L83
- https://doi.org/10.1088/0953-8984/7/6/004
Abstract
We report sharp and well resolved exciton peaks in the room-temperature absorption spectra of strained InGaAs/GaAs single-quantum-well (SQW) and multiple-quantum-well (MQW) structures and demonstrate for the first time that the strength of the exciton-LO-phonon coupling, determined from the linewidth analysis, is stronger in InGaAs/GaAs SQW structures than in InGaAs/GaAs MQW structures. The inhomogeneous linewidth and homogeneous broadening in InGaAs/GaAs SQW and MQW structures are discussed in detail.Keywords
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