Influence of Cd vacancies on the photoluminescence of CdTe
- 1 July 1986
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (1) , 452-454
- https://doi.org/10.1063/1.337620
Abstract
Cd vacancies are identified as responsible for both the 1.55-eV narrow band and the 1.591-eV bound exciton peak of the CdTe photoluminescence spectrum. The characteristic 1.44-eV broadband does not seem to be related to luminescent centers involving those vacancies.This publication has 11 references indexed in Scilit:
- Photoluminescence of CdSe: The effect of photoetchingPhysical Review B, 1985
- GREG: A New Hotwall‐Close‐Spaced Vapor Transport Deposition SystemJournal of the Electrochemical Society, 1985
- Photoluminescent properties of films of CdTe on glass grown by a hot-wall-close space vapor transport methodJournal of Applied Physics, 1984
- Electrical and optical properties of Au in cadmium tellurideJournal of Applied Physics, 1984
- Effect of surface preparation on the 77 K photoluminescence of CdTeJournal of Applied Physics, 1983
- Effects of Cd-vapor and Te-vapor heat treatments on the luminescence of solution-grown CdTe:InJournal of Applied Physics, 1982
- Emission properties in electrolytically prepared CdTe p-n junctionsApplied Physics Letters, 1981
- The effect of photoelectrochemical etching on the performance of CdTe polysulfide photoelectrochemical cellsApplied Physics Letters, 1981
- Study of the interface changes during operation of nCdTe-electrolyte solar cellsJournal of Applied Physics, 1979
- Identification of edge and exciton emission centres in CdTeJournal of Physics C: Solid State Physics, 1971