C-V and G-V characteristics of ion-implanted MOS structures depending upon the geometrical structure of the implanted region

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Abstract
It is found that the capacitance‐voltage (C‐V) and conductance‐voltage (G‐V) characteristics of MOS capacitors, into which ions of the opposite conductivity type are implanted, depend strongly upon the geometrical structure of the ion‐implanted region. This phenomenon can be analyzed in terms of lateral current flow which connects an inversion layer formed in the ion‐implanted region to a surrounding nonimplanted substrate. On the basis of this model, the C‐V and G‐V characteristics are calculated using a simple equivalent circuit, and general relationships inherent in this model are obtained. MOS capacitors with an ion‐implanted layer of different geometries have been prepared to measure their C‐V and G‐V characteristics. Comparison of experimental measurements with theory substantiates the lateral current flow model.