Dissociative Multiple Ionization Following Valence and Si:2p Core Level Photoexcitation of HSi(CH3)3 in the Range 38−133 eV
- 1 January 1996
- journal article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry
- Vol. 100 (2) , 523-531
- https://doi.org/10.1021/jp952088m
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Ab Initio Molecular Orbital Investigation of the Unimolecular Decomposition of CH3SiH2+The Journal of Physical Chemistry, 1995
- Si L- and K-edge x-ray-absorption near-edge spectroscopy of gas-phase Si((: Models for solid-state analogsPhysical Review B, 1993
- Efficient isomerization of Si(C2H5)H2+ to Si(CH3)2H+ by collisional activation in the gas phaseOrganometallics, 1993
- Dyotropic rearrangement of organosilylenium ions in the gas phaseOrganometallics, 1993
- Vibrational fine structure in the Si 2pphotoelectron spectra of simple gaseous moleculesPhysical Review A, 1991
- Photoion spectra in coincidence with threshold electrons near the Ar 2p ionisation limitsJournal of Physics B: Atomic, Molecular and Optical Physics, 1988
- Reaction of silicon ion (2P) with silane (SiH4, SiD4). Heats of formation of SiHn, SiHn+ (n = 1, 2, 3), and Si2Hn+ (n = 0, 1, 2, 3). Remarkable isotope exchange reaction involving four-hydrogen shiftsJournal of the American Chemical Society, 1987
- Relaxation processes of resonances inin the vicinity of the silicon 2pthresholdPhysical Review A, 1986
- Selective resonant photoionization processes near the Si 2pedge of tetramethylsilanePhysical Review Letters, 1986
- Overlapping core to valence and core to Rydberg transitions and resonances in the XUV spectra of SiF4Journal of Physics B: Atomic and Molecular Physics, 1980