Si L- and K-edge x-ray-absorption near-edge spectroscopy of gas-phase Si(CH3)x(OCH3)4x: Models for solid-state analogs

Abstract
Both the L- and K-edge x-ray-absorption near-edge spectra for the five compounds Si(OCH3 )x(CH3 )4x (x=0 to 4) are reported. The spectra of the two end members of the series, Si(OCH3 )4 and Si(CH3 )4, are compared to the spectra of their respective solid-state analogs, SiO2 and SiC. The L-edge spectra of gaseous Si(OCH3 )4 and solid SiO2 are qualitatively identical; while the L-edge spectra of gaseous Si(CH3 )4 and its solid-state counterpart, SiC, show strong similarities. MS-Xα calculations were performed for the two species Si(OCH3 )4 and Si(CH3 )4 for the Si 2p, 2s, and 1s regions and used to assign the spectra for both compounds. By comparison of molecular-orbital diagrams of Si(OCH3 )4 and SiO2, the first two transitions in the L-edge spectra of SiO2 have been assigned to transitions from the Si 2p to orbitals of a1* and t2* symmetry. In addition to SiO2, the L-edge spectra of the isoelectronic species PO43, SO42, and ClO4 are also assigned in a similar manner. Compared to the L edge, the K-edge region of the gas-phase compounds is found to have less in common with the spectra of the solid-state analogs. In the K-edge region, peaks from the extended band structure and/or multiple scattering are evident in the solid-state compounds. These peaks are not present, as expected, in the gas-phase models or in the theoretical calculations on the gas-phase compounds. These multiple-scattering peaks are not seen in the L-edge solid-state spectra because of the strong shape resonances peaks in this region.