Single-electron tunnelling transistor as a current rectifier with potential-controlled current polarity
- 1 June 1995
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 10 (6) , 877-880
- https://doi.org/10.1088/0268-1242/10/6/021
Abstract
The asymmetry of the current-voltage characteristic of a single-electron tunnelling transistor causes a current rectification when applying a low-frequency voltage signal. The polarity of the direct current depends on the voltage applied to a gate electrode. The characteristic change in current polarity with increasing gate voltage can be used to detect a difference in the low frequency excitation, and also the high frequency excitation of the two electron reservoirs coupled to the electronic island.Keywords
This publication has 11 references indexed in Scilit:
- Observation of Photon-Assisted Tunneling through a Quantum DotPhysical Review Letters, 1994
- Photon-assisted tunneling through a quantum dotPhysical Review B, 1994
- Charging effects in ultrasmall quantum dots in the presence of time-varing fieldsPhysical Review Letters, 1994
- Metrological accuracy of the electron pumpPhysical Review Letters, 1994
- Competing channels in single-electron tunneling through a quantum dotPhysical Review Letters, 1993
- Observation of Coulomb blockade oscillations in the thermopower of a quantum dotSolid State Communications, 1993
- Coulomb-Blockade Oscillations in the Thermopower of a Quantum DotEurophysics Letters, 1993
- Single-Electron Pump Based on Charging EffectsEurophysics Letters, 1992
- Quantized current in a quantum-dot turnstile using oscillating tunnel barriersPhysical Review Letters, 1991
- Frequency-locked turnstile device for single electronsPhysical Review Letters, 1990