Computer calculations of impurity profiles in silicon (I)
- 16 January 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 15 (1) , 329-341
- https://doi.org/10.1002/pssa.2210150137
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Concentration-Dependent Diffusion of Boron and Phosphorus in SiliconJournal of Applied Physics, 1970
- General Theory of Impurity Diffusion in Semiconductors via the Vacancy MechanismPhysical Review B, 1969
- Interactions in Sequential Diffusion Processes in SemiconductorsJournal of Applied Physics, 1968
- The effect of the internal electric field on ionized impurity diffusion in semiconductorsBritish Journal of Applied Physics, 1966
- Diffusion of charged particles into a semiconductor under consideration of the built-in fieldSolid-State Electronics, 1961
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954