Concentration-Dependent Diffusion of Boron and Phosphorus in Silicon
- 1 June 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (7) , 2859-2866
- https://doi.org/10.1063/1.1659328
Abstract
A model of enhanced diffusion of boron and phosphorus in silicon is proposed, which includes the effects of plastic deformation and the degeneracy of highly doped silicon. Numerical solutions of the diffusion equation with concentration‐dependent diffusion constant are presented, and the average conductivities of typical `anomalously diffused' silicon layers are given as a function of surface concentrations. Also discussed are the effects of background doping levels and surface concentrations on the effective diffusion constant and its measured activation energy.This publication has 22 references indexed in Scilit:
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