An electron microscope study of defects in Cr-doped CdTe
- 1 October 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 92 (1-2) , 208-214
- https://doi.org/10.1016/0022-0248(88)90451-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Characterization of Te precipitates in CdTe crystalsApplied Physics Letters, 1983
- Lattice defects in (Hg,Cd)Te: Investigations of their nature and evolutionJournal of Vacuum Science & Technology A, 1983
- Chemical Diffusion in Cadmium TellurideJournal of Applied Physics, 1970
- Misfit Dislocations in Bicrystals of Epitaxially Grown Silicon on Boron-Doped Silicon SubstratesJournal of Applied Physics, 1969
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969
- Transient Currents in Semi-Insulating CdTe Characteristic of Deep TrapsJournal of Applied Physics, 1968
- Preparation of [100]-Oriented Foils of GaAs for Transmission Electron MicroscopyJournal of Applied Physics, 1967
- Diffraction Contrast from Small Voids as Observed by Electron MicroscopyPhysica Status Solidi (b), 1965