Calculation Model for Valence Electrons and Hydrogen Concentration in a-Si:H
- 1 September 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 113 (1) , 105-111
- https://doi.org/10.1002/pssb.2221130110
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Gap optique et indice de réfraction du silicium amorphe hydrogéné à 95 K et 295 KThin Solid Films, 1981
- Influence of hydrogen on optical properties of a-Si : HJournal of Applied Physics, 1980
- Optical absorption of SiH0.16 films near the optical GAPJournal of Non-Crystalline Solids, 1980
- Reflectivity and dielectric function of glow-discharge siliconJournal of Non-Crystalline Solids, 1980
- Hydrogen and matrix effect on the optical gap of sputtered a-Si:HJournal of Non-Crystalline Solids, 1980
- Optical constants of rf sputtered hydrogenated amorphous SiPhysical Review B, 1979
- Structural interpretation of the vibrational spectra of-Si: H alloysPhysical Review B, 1979
- Optical properties and structure of amorphous silicon films prepared by CVDSolar Energy Materials, 1979
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Principles of the Theory of SolidsPublished by Cambridge University Press (CUP) ,1972