Heavy doping parameters estimated from transistor measurements
- 31 May 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (5) , 911-919
- https://doi.org/10.1016/0038-1101(88)90045-7
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Measurement of steady-state minority-carrier transport parameters in heavily doped n-type siliconIEEE Transactions on Electron Devices, 1987
- Comments on determination of bandgap narrowing from activation plotsIEEE Transactions on Electron Devices, 1986
- Measuring and modeling minority carrier transport in heavily doped siliconSolid-State Electronics, 1985
- Physical mechanisms of bandgap-narrowing in siliconElectronics Letters, 1983
- A method for determining energy gap narrowing in highly doped semiconductorsIEEE Transactions on Electron Devices, 1982
- Heavy doping effects in p-n-p bipolar transistorsIEEE Transactions on Electron Devices, 1980
- The effect of strain-induced band-gap narrowing on high concentration phosphorus diffusion in siliconJournal of Applied Physics, 1979
- The temperature dependence of the DC base and collector currents in silicon bipolar transistorsIEEE Transactions on Electron Devices, 1976
- Temperature dependence of the band gap of siliconJournal of Applied Physics, 1974
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967