A comparison of techniques for depth profiling oxygen in silicon
- 20 December 1979
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 167 (2) , 279-287
- https://doi.org/10.1016/0029-554x(79)90016-8
Abstract
No abstract availableKeywords
Funding Information
- National Science Foundation (DMR-77-23999)
- Division of Chemistry (6-03694)
- Magyar Tudományos Akadémia
This publication has 4 references indexed in Scilit:
- Mechanism of high-temperature instability of CuO–Ag thin-film solar absorbersJournal of Vacuum Science and Technology, 1977
- Evaluation of a cesium primary ion source on an ion microprobe mass spectrometerAnalytical Chemistry, 1977
- Depth profile detection limit of 3×1015 atom cm−3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometryApplied Physics Letters, 1977
- Elastic Scattering of Alpha-Particles by OxygenPhysical Review B, 1953