4×4 Surface-Emitting 1.55 µm InGaAsP/InP Laser Arrays with Microcoated Reflectors Fabricated by Reactive Ion Etching

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Abstract
4×4 surface-emitting 1.55 µm InGaAsP/InP laser arrays with microcoated reflectors are fabricated. These surface-emitting laser arrays can be operated in the CW condition at 20°C and driven independently. The average CW threshold current of these lasers is about 55 mA and the average maximum output power is about 4 mW at 20°C. Using this 4×4 surface-emitting laser array, simple letters can be rendered by brightened dots. The laser wafer has a buried-heterostructure (BH) fabricated by all MOCVD (Metal Organic Vapor Deposition) and dry etching. The etched vertical laser facets and the inclined reflectors are fabricated simultaneously by inclined RIE using Cl2 gas, a TiO2 mask, and a 50 degree stainless steel sample holder. A microcoating process for the inclined reflectors and the back laser facets that achieves high reflectivity has also been developed.