Two-dimensional simulation on the electric field spike of indium antimonide charge injection devices
- 26 September 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (9) , 1169-1178
- https://doi.org/10.1016/0038-1101(90)90096-w
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Ideal mode operation of an InSb charge injection deviceIEEE Transactions on Electron Devices, 1984
- Field induced tunneling in Hg1−xCdxTe photodiodesApplied Physics Letters, 1982
- The MIS physics of the native oxide–Hg1−xCdxTe interfaceJournal of Vacuum Science and Technology, 1982
- Tunnel current limitations of narrow bandgap infrared charge coupled devices∗Infrared Physics, 1977