Communication through stacked silicon circuitry using integrated thin film InP-based emitters and detectors
- 1 September 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (9) , 1028-1030
- https://doi.org/10.1109/68.414691
Abstract
To demonstrate optical communication through stacked silicon circuitry, thin film InGaAsP-based emitters and photodetectors have been bonded directly onto silicon circuitry. These optoelectronic devices operate at a wavelength to which silicon is transparent. The thin film emitters and detectors were integrated onto a MOSIS foundry silicon CMOS integrated circuit which contained driver and amplifier circuits. Bidirectional vertical optical communication between two layers of circuitry was demonstrated by stacking the layers, exciting the emitter driver circuit on one layer with an electrical signal, and measuring the output electrical signal from the detector amplifier located on the other circuit in the vertical stack.<>Keywords
This publication has 8 references indexed in Scilit:
- A fine-grain, high-throughput architecture using through-wafer optical interconnectPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Design issues for through-wafer optoelectronic multicomputer interconnectsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Resonant-cavity-enhanced thin-film AlGaAs/GaAs/AlGaAs LED’s with metal mirrorsApplied Optics, 1995
- Vertical optical communication through stacked silicon wafers using hybrid monolithic thin film InGaAsP emitters and detectorsIEEE Photonics Technology Letters, 1993
- Single-crystal thin film InP: Fabrication and absorption measurementsApplied Physics Letters, 1992
- Grafted semiconductor optoelectronicsIEEE Journal of Quantum Electronics, 1991
- GaInAs/Inp pin photodetectors integrated with glass waveguidesElectronics Letters, 1991
- On the feasibility of through-wafer optical interconnects for hybrid wafer-scale-integrated architecturesIEEE Transactions on Electron Devices, 1987