Raman Microprobe Study on Relaxation of Residual Stresses in Patterned Silicon-on-Sapphire
- 1 June 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (6A) , L403
- https://doi.org/10.1143/jjap.23.l403
Abstract
Residual stresses in crystalline silicon islands with concave and convex corners patterned on sapphire substrate are examined by Raman microprobe technique with a spatial resolution of ∼1 µm. It is found that the compressive stresses inherently remaining in SOS as-grown by conventional vapor phase epitaxy are relaxed at the edge and corners, depending on the degree of freedom in the relaxing directions.Keywords
This publication has 8 references indexed in Scilit:
- Raman Scattering Characterization of Residual Stresses in Silicon-on-SapphireJapanese Journal of Applied Physics, 1984
- Characterization of ion implanted and laser annealed polycrystalline Si by a Raman microprobeApplied Physics Letters, 1982
- Raman measurements of stress in silicon-on-sapphire device structuresApplied Physics Letters, 1982
- Microstrain in laser-crystallized silicon islands on fused silicaApplied Physics Letters, 1982
- Relief of Residual Strain in Silicon-on-Sapphire by Heat-Assisted Pulsed-Laser AnnealingJapanese Journal of Applied Physics, 1981
- Anomalous Residual-Stress in Pulsed-Laser-Annealed Silicon-on-Sapphire Revealed by Raman ScatteringJapanese Journal of Applied Physics, 1981
- Raman spectra of Si-implanted silicon on sapphireSolid State Communications, 1981
- Elastoresistance of n-type silicon on sapphireJournal of Applied Physics, 1974