Relief of Residual Strain in Silicon-on-Sapphire by Heat-Assisted Pulsed-Laser Annealing
- 1 May 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (5) , L371
- https://doi.org/10.1143/jjap.20.l371
Abstract
Heat-assisted pulsed-laser annealing is proposed to relieve residual strain in silicon-on-sapphire (SOS). It is performed by irradiating Q-switched ruby laser light to Si-ion-implanted SOS samples while they are thermally heated. It is found from Raman scattering measurements that the residual strain is relieved by annealing with the laser energy density of 1 J/cm2 to 3 J/cm2 at the heating temperature of 400°C to 500°C.Keywords
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