Formulation of a statistical thermodynamic model for the electron concentration in heavily doped metal oxide semiconductors applied to the tin-doped indium oxide system
- 1 February 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 223 (2) , 303-310
- https://doi.org/10.1016/0040-6090(93)90537-y
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
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